PSMN005-55B,118
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PSMN005-55B,118
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PSMN005-55B,118

Brand:NXP
Model:PSMN005-55B,118
stock:2526
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series TrenchMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 55 V
Current at 25 ° C - continuous drain (Id) 75A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 5.8 mΩ @ 25A,10V
Vgs (th) (maximum) for different Ids 2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 103 nC @ 5 V
Vgs (max) ±15V
Input capacitance at different Vds (Ciss) (maximum) 6500 pF @ 25 V
FET function -
Power dissipation (maximum) 230W(Tc)
Common problem
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