Installation type | Surface mount |
packing | TR,CT,bulk |
series | TrenchMOS™ |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | SOT-23(TO-236AB) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 4.7A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 55 mΩ @ 2A,10V |
Vgs (th) (maximum) for different Ids | 2V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 9.4 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 350 pF @ 30 V |
FET function | - |
Power dissipation (maximum) | 280mW(Tj) |