BS108,126
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BS108,126
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BS108,126

Brand:NXP
Model:BS108,126
stock:87416
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing TB
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-92-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 200 V
Current at 25 ° C - continuous drain (Id) 300mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.8V
On resistance (maximum) for different Ids and Vgs 5 Ω @ 100mA,2.8V
Vgs (th) (maximum) for different Ids 1.8V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 120 pF @ 25 V
FET function -
Power dissipation (maximum) 1W(Ta)
Common problem
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