PH3855L,115
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likePH3855L,115
Brand：NXP
Model：PH3855L,115
stock：12849
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | TrenchMOS™ |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | LFPAK56,Power-SO8 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 55 V |
| Current at 25 ° C - continuous drain (Id) | 24A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 36 mΩ @ 15A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 11.7 nC @ 5 V |
| Vgs (max) | ±15V |
| Input capacitance at different Vds (Ciss) (maximum) | 765 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 50W(Tc) |
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