DMN2005LP4K-7
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likeDMN2005LP4K-7
Brand：Diodes
Model：DMN2005LP4K-7
stock：87858
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥0.66
The market price fluctuates. Please consult the customer service for the actual price
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product details
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| Installation type | Surface mount |
| packing | TR,CT |
| series | - |
| Part status | On sale |
| working temperature | -65°C ~ 150°C(TJ) |
| Encapsulation/Housing | X2-DFN1006-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 200mA(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4V |
| On resistance (maximum) for different Ids and Vgs | 1.5 Ω @ 10mA,4V |
| Vgs (th) (maximum) for different Ids | 900mV @ 100µA |
| Gate charge (Qg) at different Vgs (maximum) | - |
| Vgs (max) | ±10V |
| Input capacitance at different Vds (Ciss) (maximum) | 41 pF @ 3 V |
| FET function | - |
| Power dissipation (maximum) | 400mW(Ta) |
Common problem
Industry trends
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