Installation type | Surface mount |
packing | TR |
series | - |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | X2-DFN0806-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 25 V |
Current at 25 ° C - continuous drain (Id) | 145mA(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 2.7V,4.5V |
On resistance (maximum) for different Ids and Vgs | 10 Ω @ 200mA,4.5V |
Vgs (th) (maximum) for different Ids | 1.5V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 0.35 nC @ 4.5 V |
Vgs (max) | -8V |
Input capacitance at different Vds (Ciss) (maximum) | 27.2 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 360mW(Ta) |