DMN62D1LFDQ-13
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DMN62D1LFDQ-13
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DMN62D1LFDQ-13

Brand:Diodes
Model:DMN62D1LFDQ-13
stock:7468
Store:ShenZhen/Hongkong
DataSheet: Search
Price:1+
¥0.12
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product details
Common problem
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Installation type Surface mount
packing TR
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing U-DFN1212-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 400mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.5V,4V
On resistance (maximum) for different Ids and Vgs 2 Ω @ 100mA,4V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 0.55 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 36 pF @ 25 V
FET function -
Power dissipation (maximum) 500mW
Common problem
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