Installation type | Surface mount |
packing | TR |
series | - |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | X2-DFN1006-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 1A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 1.8V,4.5V |
On resistance (maximum) for different Ids and Vgs | 400 mΩ @ 600mA,4.5V |
Vgs (th) (maximum) for different Ids | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 2 nC @ 10 V |
Vgs (max) | ±8V |
Input capacitance at different Vds (Ciss) (maximum) | 82 pF @ 16 V |
FET function | - |
Power dissipation (maximum) | 500mW(Ta) |