DMN6070SY-13
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DMN6070SY-13
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DMN6070SY-13

Brand:Diodes
Model:DMN6070SY-13
stock:63672
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.18
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-89-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 4.1A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 85 mΩ @ 2.5A,10V
Vgs (th) (maximum) for different Ids 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 12.3 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 588 pF @ 30 V
FET function -
Power dissipation (maximum) 2.1W(Ta)
Common problem
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