DMN3026LVTQ-7
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DMN3026LVTQ-7
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DMN3026LVTQ-7

Brand:Diodes
Model:DMN3026LVTQ-7
stock:23289
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.23
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TSOT-23
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 6.6A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 23 mΩ @ 6.5A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 12.5 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 643 pF @ 15 V
FET function -
Power dissipation (maximum) 1.2W(Ta)
Common problem
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