Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | U-WLB1010-4 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 12 V |
Current at 25 ° C - continuous drain (Id) | 3.3A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4.5V |
On resistance (maximum) for different Ids and Vgs | 80 mΩ @ 500mA,4.5V |
Vgs (th) (maximum) for different Ids | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 5 nC @ 4.5 V |
Vgs (max) | -6V |
Input capacitance at different Vds (Ciss) (maximum) | 350 pF @ 6 V |
FET function | - |
Power dissipation (maximum) | 820mW(Ta) |