ZXMN10A11KTC
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ZXMN10A11KTC
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ZXMN10A11KTC

Brand:Diodes
Model:ZXMN10A11KTC
stock:27192
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.40
The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-252-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 2.4A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 6V,10V
On resistance (maximum) for different Ids and Vgs 350 mΩ @ 2.6A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 5.4 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 274 pF @ 50 V
FET function -
Power dissipation (maximum) 2.11W(Ta)
Common problem
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