DMTH6010LK3Q-13
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DMTH6010LK3Q-13
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DMTH6010LK3Q-13

Brand:Diodes
Model:DMTH6010LK3Q-13
stock:46822
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.72
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-252-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 14.8A(Ta),70A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 8 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 41.3 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2090 pF @ 30 V
FET function -
Power dissipation (maximum) 31W(Ta)
Common problem
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