ZXM66N02N8TA
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ZXM66N02N8TA
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ZXM66N02N8TA

Brand:Diodes
Model:ZXM66N02N8TA
stock:74950
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing -
series -
Part status stop production
working temperature -
Encapsulation/Housing 8-SO
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 9A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 15 mΩ @ 4.1A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) -
Input capacitance at different Vds (Ciss) (maximum) -
FET function -
Power dissipation (maximum) -
Common problem
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