ZXM66P02N8TA
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ZXM66P02N8TA
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ZXM66P02N8TA

Brand:Diodes
Model:ZXM66P02N8TA
stock:76952
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SO
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 6.4A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 25 mΩ @ 3.2A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 43.3 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 2068 pF @ 15 V
FET function -
Power dissipation (maximum) 1.56W(Ta)
Common problem
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