ZVN1409ASTOA
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ZVN1409ASTOA
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ZVN1409ASTOA

Brand:Diodes
Model:ZVN1409ASTOA
stock:15342
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing TR
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing E-Line(TO-92 compatible)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 90 V
Current at 25 ° C - continuous drain (Id) 10mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 250 Ω @ 5mA,10V
Vgs (th) (maximum) for different Ids 2.4V @ 100µA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 6.5 pF @ 25 V
FET function -
Power dissipation (maximum) 625mW(Ta)
Common problem
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