T2N7002AK,LM
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T2N7002AK,LM
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T2N7002AK,LM

Brand:Toshiba
Model:T2N7002AK,LM
stock:65827
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.20
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product details
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Installation type Surface mount
packing TR,CT
series U-MOSVII-H
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing SOT-23-3
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 200mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 3.9 Ω @ 100mA,10V
Vgs (th) (maximum) for different Ids 2.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 0.35 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 17 pF @ 10 V
FET function -
Power dissipation (maximum) 320mW(Ta)
Common problem
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