TK17V65W,LQ
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likeTK17V65W,LQ
Brand：Toshiba
Model：TK17V65W,LQ
stock：42253
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥4.17
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| Installation type | Surface mount |
| packing | TR,CT |
| series | - |
| Part status | On sale |
| working temperature | 150°C |
| Encapsulation/Housing | 4-DFN-EP(8x8) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 17.3A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 210 mΩ @ 8.7A,10V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 900µA |
| Gate charge (Qg) at different Vgs (maximum) | 45 nC @ 10 V |
| Vgs (max) | ±30V |
| Input capacitance at different Vds (Ciss) (maximum) | 1800 pF @ 300 V |
| FET function | - |
| Power dissipation (maximum) | 156W(Tc) |
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