Installation type | Surface mount |
packing | TR,CT |
series | U-MOSVI |
Part status | On sale |
working temperature | 150°C |
Encapsulation/Housing | UFM |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 5.5A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4.5V |
On resistance (maximum) for different Ids and Vgs | 29.8 mΩ @ 3A,4.5V |
Vgs (th) (maximum) for different Ids | 1V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 12.8 nC @ 4.5 V |
Vgs (max) | +6V,-8V |
Input capacitance at different Vds (Ciss) (maximum) | 840 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 500mW(Ta) |