SSM3K318R,LF
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SSM3K318R,LF
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SSM3K318R,LF

Brand:Toshiba
Model:SSM3K318R,LF
stock:5426
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.57
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series U-MOSIV
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing SOT-23F
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 2.5A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 107 mΩ @ 2A,10V
Vgs (th) (maximum) for different Ids 2.8V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 7 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 235 pF @ 30 V
FET function -
Power dissipation (maximum) 1W(Ta)
Common problem
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