Installation type | Surface mount |
packing | TR,CT |
series | DTMOSVI |
Part status | On sale |
working temperature | 150°C |
Encapsulation/Housing | 4-DFN-EP(8x8) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 650 V |
Current at 25 ° C - continuous drain (Id) | 24A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 125 mΩ @ 12A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 1.02mA |
Gate charge (Qg) at different Vgs (maximum) | 40 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 2250 pF @ 300 V |
FET function | - |
Power dissipation (maximum) | 190W(Tc) |