Installation type | Surface mount |
packing | TR,CT |
series | U-MOSVI |
Part status | On sale |
working temperature | 150°C(TJ) |
Encapsulation/Housing | 6-UDFNB(2x2) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 10A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
On resistance (maximum) for different Ids and Vgs | 20 mΩ @ 4A,10V |
Vgs (th) (maximum) for different Ids | 2.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 20.4 nC @ 4.5 V |
Vgs (max) | +20V,-25V |
Input capacitance at different Vds (Ciss) (maximum) | 1150 pF @ 15 V |
FET function | - |
Power dissipation (maximum) | 1.25W(Ta) |