SSM6J507NU,LF
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SSM6J507NU,LF
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SSM6J507NU,LF

Brand:Toshiba
Model:SSM6J507NU,LF
stock:17573
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.61
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Installation type Surface mount
packing TR,CT
series U-MOSVI
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing 6-UDFNB(2x2)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 10A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4V,10V
On resistance (maximum) for different Ids and Vgs 20 mΩ @ 4A,10V
Vgs (th) (maximum) for different Ids 2.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 20.4 nC @ 4.5 V
Vgs (max) +20V,-25V
Input capacitance at different Vds (Ciss) (maximum) 1150 pF @ 15 V
FET function -
Power dissipation (maximum) 1.25W(Ta)
Common problem
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