TPH1400ANH,L1Q
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TPH1400ANH,L1Q
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TPH1400ANH,L1Q

Brand:Toshiba
Model:TPH1400ANH,L1Q
stock:89863
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.82
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Installation type Surface mount
packing TR,CT
series U-MOSVIII-H
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing 8-SOP Advance(5x5)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 24A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 13.6 mΩ @ 12A,10V
Vgs (th) (maximum) for different Ids 4V @ 300µA
Gate charge (Qg) at different Vgs (maximum) 22 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1900 pF @ 50 V
FET function -
Power dissipation (maximum) 1.6W(Ta),48W(Tc)
Common problem
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