TPW4R008NH,L1Q
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TPW4R008NH,L1Q
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TPW4R008NH,L1Q

Brand:Toshiba
Model:TPW4R008NH,L1Q
stock:14752
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥3.40
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Installation type Surface mount
packing TR,CT
series U-MOSVIII-H
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing 8-DSOP Advance
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 80 V
Current at 25 ° C - continuous drain (Id) 116A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 4 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 59 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 5300 pF @ 40 V
FET function -
Power dissipation (maximum) 800mW(Ta),142W(Tc)
Common problem
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