TK160F10N1L,LXGQ
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likeTK160F10N1L,LXGQ
Brand：Toshiba
Model：TK160F10N1L,LXGQ
stock：75710
Store：ShenZhen/Hongkong
DataSheet：
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￥4.52
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| Installation type | Surface mount |
| packing | TR,CT |
| series | U-MOSVIII-H |
| Part status | On sale |
| working temperature | 175°C |
| Encapsulation/Housing | TO-220SM(W) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 160A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
| On resistance (maximum) for different Ids and Vgs | 2.4 mΩ @ 80A,10V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 122 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 10100 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 375W(Tc) |
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