Installation type | Surface mount |
packing | TR,CT |
series | U-MOSVIII-H |
Part status | On sale |
working temperature | 150°C(TJ) |
Encapsulation/Housing | 8-TSON Advance(3.1x3.1) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 60 V |
Current at 25 ° C - continuous drain (Id) | 17A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 11.4 mΩ @ 8.5A,10V |
Vgs (th) (maximum) for different Ids | 2.5V @ 200µA |
Gate charge (Qg) at different Vgs (maximum) | 23 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 2000 pF @ 30 V |
FET function | - |
Power dissipation (maximum) | 700mW(Ta),30W(Tc) |