Installation type | Surface mount |
packing | TR,CT |
series | U-MOSX-H |
Part status | On sale |
working temperature | 175°C |
Encapsulation/Housing | DPAK |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 80 V |
Current at 25 ° C - continuous drain (Id) | 62A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
On resistance (maximum) for different Ids and Vgs | 6.9 mΩ @ 31A,10V |
Vgs (th) (maximum) for different Ids | 3.5V @ 500µA |
Gate charge (Qg) at different Vgs (maximum) | 39 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 2700 pF @ 40 V |
FET function | - |
Power dissipation (maximum) | 89W(Tc) |