Installation type | Surface mount |
packing | TR,CT |
series | U-MOSVI |
Part status | On sale |
working temperature | 175°C |
Encapsulation/Housing | DPAK+ |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 60 V |
Current at 25 ° C - continuous drain (Id) | 60A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
On resistance (maximum) for different Ids and Vgs | 11.2 mΩ @ 30A,10V |
Vgs (th) (maximum) for different Ids | 3V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 156 nC @ 10 V |
Vgs (max) | +10V,-20V |
Input capacitance at different Vds (Ciss) (maximum) | 7760 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 100W(Tc) |