TJ90S04M3L,LXHQ
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TJ90S04M3L,LXHQ
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TJ90S04M3L,LXHQ

Brand:Toshiba
Model:TJ90S04M3L,LXHQ
stock:71640
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥2.17
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series U-MOSVI
Part status On sale
working temperature 175°C
Encapsulation/Housing DPAK+
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 90A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4.3 mΩ @ 45A,10V
Vgs (th) (maximum) for different Ids 2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 172 nC @ 10 V
Vgs (max) +10V,-20V
Input capacitance at different Vds (Ciss) (maximum) 7700 pF @ 10 V
FET function -
Power dissipation (maximum) 180W(Tc)
Common problem
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