XPH3R206NC,L1XHQ
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XPH3R206NC,L1XHQ
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XPH3R206NC,L1XHQ

Brand:Toshiba
Model:XPH3R206NC,L1XHQ
stock:54190
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥2.34
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series Automotive, AEC-Q101, U-MOSVIII-H
Part status On sale
working temperature 175°C
Encapsulation/Housing 8-SOP Advance(5x5)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 70A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 3.2mOhm @ 35A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 500µA
Gate charge (Qg) at different Vgs (maximum) 65 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 4180 pF @ 10 V
FET function -
Power dissipation (maximum) 960mW(Ta),132W(Tc)
Common problem
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