TK160F10N1,LXGQ
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TK160F10N1,LXGQ
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TK160F10N1,LXGQ

Brand:Toshiba
Model:TK160F10N1,LXGQ
stock:57438
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥4.66
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Installation type Surface mount
packing TR,CT
series U-MOSVIII-H
Part status Not applicable to new design
working temperature 175°C
Encapsulation/Housing TO-220SM(W)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 160A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 2.4 mΩ @ 80A,10V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 121 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 8510 pF @ 10 V
FET function -
Power dissipation (maximum) 375W(Tc)
Common problem
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