TW070J120B,S1Q
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likeTW070J120B,S1Q
Brand：Toshiba
Model：TW070J120B,S1Q
stock：49891
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥43.48
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| Installation type | Through-Hole |
| packing | pipe |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 175°C |
| Encapsulation/Housing | TO-3P(N) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 36A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 20V |
| On resistance (maximum) for different Ids and Vgs | 90 mΩ @ 18A,20V |
| Vgs (th) (maximum) for different Ids | 5.8V @ 20mA |
| Gate charge (Qg) at different Vgs (maximum) | 67 nC @ 20 V |
| Vgs (max) | ±25V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 1680 pF @ 800 V |
| FET function | standard |
| Power dissipation (maximum) | 272W(Tc) |
Common problem
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