SSM6K810R,LXHF
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SSM6K810R,LXHF
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SSM6K810R,LXHF

Brand:Toshiba
Model:SSM6K810R,LXHF
stock:2527
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.92
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series Automotive, AEC-Q101
Part status On sale
working temperature 175°C
Encapsulation/Housing 6-TSOP-F
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 3.5A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 69 mΩ @ 2A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 100µA
Gate charge (Qg) at different Vgs (maximum) 3.2 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 430 pF @ 15 V
FET function -
Power dissipation (maximum) 1.5W(Ta)
Common problem
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