Installation type | Surface mount |
packing | TR,CT |
series | U-MOSII |
Part status | On sale |
working temperature | 150°C(TJ) |
Encapsulation/Housing | ES6(1.6x1.6) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 1.4A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
On resistance (maximum) for different Ids and Vgs | 251 mΩ @ 650mA,10V |
Vgs (th) (maximum) for different Ids | 2.6V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | - |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 137 pF @ 15 V |
FET function | - |
Power dissipation (maximum) | 500mW(Ta) |