Installation type | Surface mount |
packing | TR |
series | U-MOSIX-H |
Part status | On sale |
working temperature | 175°C |
Encapsulation/Housing | 8-TSON Advance(3.1x3.1) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 45 V |
Current at 25 ° C - continuous drain (Id) | 139A(Ta),80A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 2.8 mΩ @ 40A,10V |
Vgs (th) (maximum) for different Ids | 2.4V @ 300µA |
Gate charge (Qg) at different Vgs (maximum) | 39 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 3200 pF @ 22.5 V |
FET function | - |
Power dissipation (maximum) | 2.67W(Ta),104W(Tc) |