TJ40S04M3L(T6L1,NQ
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likeTJ40S04M3L(T6L1,NQ
Brand：Toshiba
Model：TJ40S04M3L(T6L1,NQ
stock：95791
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥0.89
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| Installation type | Surface mount |
| packing | TR |
| series | U-MOSVI |
| Part status | On sale |
| working temperature | 175°C(TJ) |
| Encapsulation/Housing | DPAK+ |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 40 V |
| Current at 25 ° C - continuous drain (Id) | 40A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
| On resistance (maximum) for different Ids and Vgs | 9.1 mΩ @ 20A,10V |
| Vgs (th) (maximum) for different Ids | 3V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 83 nC @ 10 V |
| Vgs (max) | +10V,-20V |
| Input capacitance at different Vds (Ciss) (maximum) | 4140 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 68W(Tc) |
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