TK65G10N1,RQ
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likeTK65G10N1,RQ
Brand：Toshiba
Model：TK65G10N1,RQ
stock：85101
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥3.73
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| Installation type | Surface mount |
| packing | TR,CT |
| series | U-MOSVIII-H |
| Part status | Final sale |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | D2PAK |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 65A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 4.5 mΩ @ 32.5A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 81 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 5400 pF @ 50 V |
| FET function | - |
| Power dissipation (maximum) | 156W(Tc) |
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