TK31J60W5,S1VQ
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TK31J60W5,S1VQ
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TK31J60W5,S1VQ

Brand:Toshiba
Model:TK31J60W5,S1VQ
stock:78994
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥10.13
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Installation type Through-Hole
packing pipe
series DTMOSIV
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing TO-3P(N)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 30.8A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 88 mΩ @ 15.4A,10V
Vgs (th) (maximum) for different Ids 3.7V @ 1.5mA
Gate charge (Qg) at different Vgs (maximum) 105 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 3000 pF @ 300 V
FET function Grade knot
Power dissipation (maximum) 230W(Tc)
Common problem
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