TK35N65W5,S1F
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TK35N65W5,S1F
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TK35N65W5,S1F

Brand:Toshiba
Model:TK35N65W5,S1F
stock:3934
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥9.54
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product details
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Installation type Through-Hole
packing pipe
series DTMOSIV
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing TO-247
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 35A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 95 mΩ @ 17.5A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 2.1mA
Gate charge (Qg) at different Vgs (maximum) 115 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 4100 pF @ 300 V
FET function -
Power dissipation (maximum) 270W(Tc)
Common problem
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