2SK3309(TE24L,Q)
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2SK3309(TE24L,Q)
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2SK3309(TE24L,Q)

Brand:Toshiba
Model:2SK3309(TE24L,Q)
stock:99501
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing TO-220SM
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 450 V
Current at 25 ° C - continuous drain (Id) 10A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 650 mΩ @ 5A,10V
Vgs (th) (maximum) for different Ids 5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 23 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 920 pF @ 10 V
FET function -
Power dissipation (maximum) 65W(Tc)
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