Installation type | Surface mount |
packing | TR |
series | U-MOSIII-H |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | VS-6(2.9x2.8) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 40 V |
Current at 25 ° C - continuous drain (Id) | 3.9A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 75 mΩ @ 1.9A,10V |
Vgs (th) (maximum) for different Ids | 2.3V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 4.4 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 251 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 700mW(Ta) |