TPC8022-H(TE12LQ,M
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TPC8022-H(TE12LQ,M
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TPC8022-H(TE12LQ,M

Brand:Toshiba
Model:TPC8022-H(TE12LQ,M
stock:57828
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 8-SOP(5.5x6.0)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 7.5A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 27 mΩ @ 3.8A,10V
Vgs (th) (maximum) for different Ids 2.3V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 11 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 650 pF @ 10 V
FET function -
Power dissipation (maximum) 1W(Ta)
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