TPC8110(TE12L,Q,M)
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likeTPC8110(TE12L,Q,M)
Brand：Toshiba
Model：TPC8110(TE12L,Q,M)
stock：4855
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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| Installation type | Surface mount |
| packing | TR |
| series | U-MOSIII |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | 8-SOP(5.5x6.0) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 40 V |
| Current at 25 ° C - continuous drain (Id) | 8A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
| On resistance (maximum) for different Ids and Vgs | 25 mΩ @ 4A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 48 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2180 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 1W(Ta) |
Common problem
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