Installation type | Through-Hole |
packing | bulk |
series | - |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | TO-220NIS |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 60 V |
Current at 25 ° C - continuous drain (Id) | 14A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
On resistance (maximum) for different Ids and Vgs | 120 mΩ @ 7A,10V |
Vgs (th) (maximum) for different Ids | 2V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 45 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 1200 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 40W(Tc) |