2SK3662(F)
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like2SK3662(F)
Brand：Toshiba
Model：2SK3662(F)
stock：10900
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price:
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Through-Hole |
| packing | bulk |
| series | U-MOSIII |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | TO-220NIS |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 35A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
| On resistance (maximum) for different Ids and Vgs | 12.5 mΩ @ 18A,10V |
| Vgs (th) (maximum) for different Ids | 2.5V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 91 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 5120 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 35W(Tc) |
Common problem
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