SSM4K27CTTPL3
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SSM4K27CTTPL3
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SSM4K27CTTPL3

Brand:Toshiba
Model:SSM4K27CTTPL3
stock:80825
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series U-MOSIII
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing CST4(1.2x0.8)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 500mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4V
On resistance (maximum) for different Ids and Vgs 205 mΩ @ 250mA,4V
Vgs (th) (maximum) for different Ids 1.1V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 174 pF @ 10 V
FET function -
Power dissipation (maximum) 400mW(Ta)
Common problem
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