SSM3K106TU(TE85L)
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SSM3K106TU(TE85L)
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SSM3K106TU(TE85L)

Brand:Toshiba
Model:SSM3K106TU(TE85L)
stock:34711
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series π-MOSVI
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing UFM
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 1.2A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4V,10V
On resistance (maximum) for different Ids and Vgs 310 mΩ @ 600mA,10V
Vgs (th) (maximum) for different Ids 2.3V @ 100µA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 36 pF @ 10 V
FET function -
Power dissipation (maximum) 500mW(Ta)
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