TK40P03M1(T6RDS-Q)
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TK40P03M1(T6RDS-Q)
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TK40P03M1(T6RDS-Q)

Brand:Toshiba
Model:TK40P03M1(T6RDS-Q)
stock:59614
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR
series U-MOSVI-H
Part status stop production
working temperature -
Encapsulation/Housing DPAK
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 40A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 10.8 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 2.3V @ 100µA
Gate charge (Qg) at different Vgs (maximum) 17.5 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1150 pF @ 10 V
FET function -
Power dissipation (maximum) -
Common problem
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