Installation type | Surface mount |
packing | TR |
series | U-MOSVI-H |
Part status | Final sale |
working temperature | - |
Encapsulation/Housing | DPAK |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 45A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 9.7 mΩ @ 22.5A,10V |
Vgs (th) (maximum) for different Ids | 2.3V @ 200µA |
Gate charge (Qg) at different Vgs (maximum) | 25 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 1500 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | - |