TK50E08K3,S1X(S
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TK50E08K3,S1X(S
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TK50E08K3,S1X(S

Brand:Toshiba
Model:TK50E08K3,S1X(S
stock:72201
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series -
Part status stop production
working temperature -
Encapsulation/Housing TO-220-3
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 75 V
Current at 25 ° C - continuous drain (Id) 50A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 12 mΩ @ 25A,10V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) 55 nC @ 10 V
Vgs (max) -
Input capacitance at different Vds (Ciss) (maximum) -
FET function -
Power dissipation (maximum) -
Common problem
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